Impedance Matching of a GaAs Microwave Power Amplifier Die to a Ceramic QFN Package
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How to Cite

1.
Shedenko V.V., Uvaysov S.U., Ivanov V.S., Hristyuk M.S. Impedance Matching of a GaAs Microwave Power Amplifier Die to a Ceramic QFN Package // Russian Journal of Cybernetics. 2026. Vol. 7, № 2. P. 84-93.

Abstract

we studied impedance matching between a GaAs microwave power amplifier and a ceramic QFN package. We showed that the initial package configuration does not provide adequate impedance matching due to parasitic effects from the package leads, bond wires, and the central ground pad. We based the analysis on electromagnetic simulations of the die–package structure and S-parameter evaluation. We then modified the package geometry by adjusting the ground pad layout, signal leads, and bond-wire interconnects. We showed that introducing a multistage reactive structure improves impedance matching and reduces the influence of parasitic elements without the need for external matching circuits.

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